2026.02.08 (일)

  • 맑음동두천 -9.7℃
  • 맑음강릉 -4.3℃
  • 맑음서울 -9.3℃
  • 맑음대전 -6.9℃
  • 맑음대구 -5.6℃
  • 맑음울산 -5.2℃
  • 광주 -5.4℃
  • 맑음부산 -3.7℃
  • 흐림고창 -4.7℃
  • 제주 -0.9℃
  • 맑음강화 -9.3℃
  • 맑음보은 -6.8℃
  • 맑음금산 -6.8℃
  • 구름많음강진군 -3.6℃
  • 맑음경주시 -6.0℃
  • 맑음거제 -2.9℃
기상청 제공

경제

Samsung Now Producing 4Gb LPDDR3 Mobile DRAM, Using 20nm-class* Process Technology

[By NBC-1TV H. J Yook]Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced the industry’s first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class* process node.

The new 4Gb LPDDR3 mobile DRAM enables performance levels comparable to the standard DRAM utilized in personal computers, making it an attractive solution for demanding multimedia-intensive features on next-generation mobile devices such as high-performance smartphones and tablets.

“By providing the most efficient next-generation mobile memory with a very large data capacity, we are now enabling OEMs to introduce even more innovative designs in the marketplace,” said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. “Our 20nm-class four gigabit mobile DRAM provides another example of our ability to deliver well-differentiated, high-performance, high-density memory to customers in a timely manner.”



배너

관련기사


배너
배너
배너
배너
배너
배너
배너
배너
배너
배너
배너
배너